NAND Flash

基本解釋

" In one example of a NAND-type flash memory, the voltage threshold is negative after the memory element is erased, in what may be defined as the logic "1" state.
在NAND型快閃存儲器的一個實例中，在存儲器元件被擦除之后電壓閾值為負，其可界定為邏輯“1”狀態(tài)。
Furthermore, it is intended to standardize the collection of commands NAND flash- memory and to ensure infrastructure for further development of the possibilities technology.
此外，它的用意是規(guī)范收集命令的NAND快閃記憶體，并確保基礎(chǔ)設(shè)施的進一步發(fā)展的可能性技術(shù)。
uspct.com
By main obstacle to the propagation of new interface is seen the fact that in the number of its supporting companies there are no Samsung, being now been the leader of the market For nAND-flash.
由主要障礙的繁殖新的接口被認為是事實，即在數(shù)量上，其支持的公司有沒有三星，正在現(xiàn)已領(lǐng)導(dǎo)人對市場的NAND閃存。
uspct.com

One driver for Seagate in the transaction is its move into NAND-Flash based products: the company is nearing the launch of a second-generation enterprise solid-state drive offering, and Luczo says a third-generation product under development jointly with Samsung should arrive in 2012.
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To the public, NAND-type flash memory is most familiar in the form of memory cards or sticks used in digital cameras or portable music players.
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Shares of SanDisk have been ablaze in the past year, gaining 125% in value as the maker of NAND-based flash memory chips basks in the sweet spot of semiconductors for mobile electronics.
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