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bipolar speed

基本解釋

Complementary bipolar(CB) processes used for high-speed op-amp IC's are examined in the paper.
本文對(duì)目前國內(nèi)外制作高速集成運(yùn)算放大器新采用的互補(bǔ)雙極（CB）工藝作了一粗略分析。
The high speed insulated gate bipolar transistor(IGBT) transport model is derived by ambipolar transport theory in this paper.
借助雙極傳輸理論導(dǎo)出了高速絕緣柵雙極晶體管（IGBT）傳輸特性的物理模型。
Pulse width modulated (PWM) inverter can generate common-mode voltage, which can produce charge-discharge current at the distant of every insulated gate bipolar transistor (IGBT) high-speed switching.
pWM逆變器在應(yīng)用中會(huì)產(chǎn)生共模電壓，共模電壓在IGBT的高速開關(guān)期間產(chǎn)生充放電電流。