HEMTs

常見(jiàn)例句

• Basing on HEMT FET, a mono-stage LNA was designed.
  利用HEMT場(chǎng)效應(yīng)管設(shè)計(jì)的單級(jí)低噪聲放大器的噪聲系數(shù)小于1.;5dB;增益大于11dB。
• The HEMT fabricated using this structure demon-strates a noise figure of 0. 76 dB and a gain of 6.5dB at 1? GHz.
  用該結(jié)構(gòu)材料制作的HEMT器件在12GHz下;噪聲系數(shù)0.;76dB;相關(guān)增益6
• This experiment lays a foundation for the optimization of RTT and RTD HEMT monolithic integration circuit development.
  實(shí)驗(yàn)為RTD/HEMT串聯(lián)型RTT性能的優(yōu)化和RTD/HEMT單片集成電路的研制奠定了基礎(chǔ)。
• The cold-mode models for HBT and HEMT devices are developed in this dissertation for the circuit design and simulation.
  在本論文中，我們對(duì)于異質(zhì)介面雙載子電晶體和高電子移動(dòng)率電晶體研究發(fā)展出非線性模型，此模型可使用于電路設(shè)計(jì)與模擬。
• To predict the circuit performance, HEMT and CMOS device models used in the designs are described.
  為了準(zhǔn)確預(yù)測(cè)電路的效能，首先描述了HEMT及CMOS的元件模型。
• The model provides a valuable tool for the optimization and performance prediction of the double planar doped HEMT.
  該模型為優(yōu)化和預(yù)測(cè)雙平面摻雜HEMT器件性能提供了一個(gè)有效手段。
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