annealing activation

基本解釋

For the whole process of homogenizing annealing, the leading factor for the change of Al-alloy-anode's activation properties is the change of crystal defects.
整個退火過程中，晶體缺陷的變化對鋁合金陽極活性改變影響最大。
The activation energy distribution during 25,100 ℃ isothermal annealing and 25-250 ℃ isochronal annealing for post-irradiation CMOS devices were calculated by annealing model.
根據(jù)退火模型計算了CMOS器件輻照后25、100℃等溫和25~250℃等時退火過程中激發(fā)能的分布。
The mechanism of elementary redistrib utionand annealing embrittlement during relaxation Was discussed on the viewpoint ofthe activation energy of atomic diffusion in Ni-P amorphous being variables.
本文從非晶中原子擴散激活能可變化的觀點出發(fā)，對弛豫過程中元素再分布和脆化機制進行了討論。