base transistor

基本解釋

A metal-base transistor is suggested.
在此提出一種金屬基極晶體管。
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The power dual base transistor (DUBAT) has been designed and fabricated by increasing the breakdown voltage and current capacity of the device.
在重點(diǎn)考慮了提高擊穿電壓和增大電流容量的基礎(chǔ)上，設(shè)計(jì)并研制出功率型DUBAT。
A high-voltage pulse generator with adjustable pulse width is described, which is designed based on common emitter transistor circuit and common base transistor circuit.
介紹了一種基于晶體管共發(fā)-共集級(jí)聯(lián)方式產(chǎn)生大幅度輸出、脈沖寬度可調(diào)的脈沖發(fā)生器。

Hold the transistor by the legs with the tab facing you, the pinout for the transistor is: C, B, E or Collector, Base, Emitter.
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The paper thus acted as the dielectric between the components of each transistor, as well as being the substrate for the circuit, in the same way that the base of a silicon chip acts both as substrate and as dielectric.
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The transistor itself is composed of a single phosphorous-31 isotope, which has been precisely placed on a base of silicon using a Scanning Tunneling Microscope in an ultra-high vacuum chamber.
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