crystal layer growth

基本解釋

Concentration boundary layer is an important subject in discussion of interfacial transfer phenomena in crystal growth.
濃度邊界層是晶體生長(zhǎng)過(guò)程中分析界面輸運(yùn)現(xiàn)象的重要元素。
The main structure changes in the creep process were fiber rearrangement, the oxidation of the C-rich interfacial layer and crystal growth within the matrix.
蠕變過(guò)程中出現(xiàn)的主要結(jié)構(gòu)變化為纖維重排、富碳界面層的氧化以及基質(zhì)中晶體的生長(zhǎng)。
We focused on the relationship between crystal growth and the interface-layer adsorptive layer and transitive layer of interface-phase . Furthermore, we put forward the interface-phase m…
重點(diǎn)論述了界面相中的界面層、吸附層和過(guò)渡層與晶體生長(zhǎng)的關(guān)系，并進(jìn)一步提出了晶體生長(zhǎng)的界面相模型。