常見例句T he epitaxially lateral overgrowth of GaN on SiO 2 areas is realized and a plana r ELO GaN film is obtained. 在SiO2 襯底上側(cè)向外延生長GaN已經(jīng)實現(xiàn) ,并得到了平面的ELOGaN薄膜。The results show that the W/Mo multilayers h ave a epitaxially grown mode and got polycrystal superlattices. 結果表明,W/Mo納米多層膜形成多晶外延生長的超晶格結構;Vacuum sputter deposition techniques were developed to achieve high Hc , with high Ms materials epitaxially grown on Cr underlayers. 使用真空濺射方法在Cr底層上沉積高矯頑力、高飽和磁化強度的磁記錄介質(zhì)。The single-crystalline Ni film with the body-centered-cubic(bcc) structure are obtained epitaxially on GaAs(001) surface at 170K. 在170K的生長溫度下,通過分子束外延在GaAs(001) 表面生長得到體心立方結構金屬Ni薄膜。However, this situation can be improved when depositing a thin pure silicon layer epitaxially on the top of the ribbon, so we got low cost but relatively high efficiency solar cells. 然而如果在這種硅片表面沉積一層高純硅,然后再在上面做電池,則既保證了效率又大大降低了成本。Structural properties of epitaxially laterally overgrown (ELO) GaN on patterned GaN "substrates" by hydride vapor phase epitaxy (HVPE) have been investigated. 研究了在刻有圖形的GaN“襯底”上用HVPE方法側(cè)向外延生長 (ELO)GaN的結構特性。 返回 epitaxially