floating gate

基本解釋

Today's flash memory devices use a single floating gate to store an electric charge, which represents data.
如今的閃存設(shè)備是用一個(gè)單獨(dú)的浮置柵極來存儲(chǔ)電荷，來保持?jǐn)?shù)據(jù)。
Electrons are injected into the floating gate by applying a high voltage to the second impurity diffusion layer in capacitive coupling with the floating gate.
通過在與浮柵電容耦合的第二雜質(zhì)擴(kuò)散層上施加高電壓對浮柵注入電子。
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In particular, as a non-volatile memory device undergoes many programming cycles, charge becomes trapped in the insulator or dielectric between the floating gate and the channel region.
特定來說，在非易失性存儲(chǔ)器裝置經(jīng)歷許多編程循環(huán)時(shí)，電荷變?yōu)榉@在浮動(dòng)?xùn)艠O與溝道區(qū)之間的絕緣體或電介質(zhì)中。

The planar cell structure integrated a Hi-K (high capacitance) metal gate stack into the NAND production to allow for smaller floating gates and thus higher storage capacity.
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