fn tunneling

基本解釋

• [電子、通信與自動(dòng)控制技術(shù)]fn隧穿

英漢例句

雙語(yǔ)例句

• FN tunneling and hot hole (HH) stress induced leakage current (SILC) transient characteristics in thin gate oxide are investigated.
  分別研究了FN隧穿應(yīng)力和熱空穴（HH）應(yīng)力導(dǎo)致的薄柵氧化層漏電流瞬態(tài)特性。
• With the rapid scaling down of MOS devices, the direct tunneling current becomes the main factor for MOS device reliability instead of FN tunneling.
  隨著器件尺寸的迅速減小，直接隧穿電流將代替FN電流而成為影響器件可靠性的主要因素。
• In moderate field region, traps can be filled by both FN current and direct tunneling of electron into the traps. It results in a quasi-saturation in the leakage current.
  在中等電場(chǎng)區(qū)域，注入電子能通過(guò)FN電流和直接隧穿到達(dá)能被填充的陷阱，從而使漏電流產(chǎn)生準(zhǔn)態(tài)飽和。

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詞組短語(yǔ)

短語(yǔ)

• FN tunneling current FN 隧穿電流
• fn tunneling effect fn 隧道效應(yīng)

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專業(yè)釋義

電子、通信與自動(dòng)控制技術(shù)

• fn隧穿