基本解釋直拉硅同根派生 CZSi相關(guān)詞英漢例句The effect of Ge doped in CZSi on the precipitation and the defect-free zone (DFZ) formation in Ge-doped CZSi wafers after a three step gettering annealing was studied. 摘要運(yùn)用高溫-低溫-高溫三步退火的本征吸除工藝研究了鍺的存在對(duì)硅片清潔區(qū)形成的影響。The variety of Ge-doped CZSi band gaps 摻鍺CZSi禁帶寬度的變化Keywords CZSi;denuded zone;impurity; 直拉硅;潔凈區(qū);雜質(zhì);Intrinsic Gettering Effect in Heavily Doped CZSi Wafers 重?fù)焦枰r底片的內(nèi)吸除效應(yīng)Study of CZSi Characteristic Doped with Element Ge at Impurity Level 摻入雜質(zhì)級(jí)等價(jià)元素鍺的CZSi晶體性能研究CZSi更多例句