nanocrystalline silicon films

基本解釋

B and P doped hydrogenated nanocrystalline silicon films (nc Si:H) were generated by plasma enhanced chemical vapor deposition (PECVD).
采用等離子增強(qiáng)化學(xué)氣相沉積（PECVD）方法成功的沉積出摻雜（主要是磷、硼）納米硅薄膜。
In argon (Ar) gas, nanocrystalline silicon films are prepared by pulsed laser ablation. The influence of ambient pressure on surface morphology of nanocrystalline silicon film is studied.
采用脈沖激光燒蝕技術(shù)在氬氣環(huán)境下制備了納米硅薄膜，研究了環(huán)境氣體壓強(qiáng)對(duì)納米硅薄膜表面形貌的影響。
Nanocrystalline silicon films have special structure and many excellent optoelectronic properties, and are supposed to be applied in optoelectronic devices and large scale integrated circuits.
納米硅薄膜具有獨(dú)特的結(jié)構(gòu)和許多優(yōu)異的光電性能，可望應(yīng)用于新型光電器件、大規(guī)模集成電路等領(lǐng)域。