基本解釋自對(duì)準(zhǔn)同根派生 self-aligned相關(guān)詞英漢例句A high voltage power MOSFET with double Si gate is developed using self aligned ion implantation process. The fabricated device has a BV DS of 120 V, an output power of 5.1 W, a power gain of 8 dB, a transconductance of 650 mS and an f T of 270 MHz. 采用硅柵結(jié)構(gòu)的自對(duì)準(zhǔn)離子注入工藝,研制成功了源漏擊穿電壓BVDS為120V、輸出功率5.;1W、功率增益8dB、跨導(dǎo)650mS、截止頻率fT為270MHz的高壓雙柵功率MOSFET器件。self aligned photoresist process 自對(duì)準(zhǔn)光刻工藝self aligned polysilicon process 自對(duì)準(zhǔn)多晶硅工藝self aligned semiconductor device 自對(duì)準(zhǔn)型半導(dǎo)體掐advanced polysilicon self aligned process 改進(jìn)型自對(duì)準(zhǔn)多晶硅柵工藝self-aligned更多例句