基本解釋鋁鎵銦磷同根派生 AlGaInP相關(guān)詞英漢例句Optimum Al Composition Analysis on AlGaInP Quaternary Double Heterojunction Light-emitting Diodes[J]. 引用該論文 陳貴楚;范廣涵;陳練輝;劉魯.For red LEDs, the AlGaInP epitaxy layer are commonly grown on GaAs substrate (sub.) for lattice constant matching requirement. 對(duì)紅色發(fā)光二極體(LED)而言,由于晶格常數(shù)之要求,通常將發(fā)光材料磷化鋁銦鎵成長(zhǎng)于砷化鎵基板上。Application of wafer bonding in AlGaInP high brightness LED devices 晶片鍵合在AlGaInP發(fā)光二極管中的應(yīng)用A novel AlGaInP thin-film light emitting diode with Omni directional reflector 新型全方位反射鋁鎵銦磷薄膜發(fā)光二極管Characteristics of AlGaInP Red Laser Diode and Its Thermal Property Analysis 紅色AlGaInP激光器的特性及熱特性分析AlGaInP更多例句