常見例句The peak power output of pulsed IMPATT source of 3.2W at 1% duty cycle is achieved at 30.52GHz, frequency chirp during the bias pulse is less than 800MHz. 振蕩源在30.;52GHz的頻率上;脈沖峰值功率爲(wèi)3The corresponding curves are given here. With these results in mind, 3-mm band P+NN+ IMPATT and 8-mm band P+PNN+ DDR avalanche devices have been designed and developed resulting in excellent performence. 已利用這些結(jié)果設(shè)計和研制成3mm P~+NN~+崩越二極琯和8mmP~+PNN~+雙漂移崩越二極琯;獲得了良好性能.Analysis of Transit Angle of DDR IMPATT Diode 雙漂移崩越二極琯的渡越角分析Thermal Resistance Measurement of IMPATT Diodes IMPATT二極琯熱阻測試J-BAND SILICON DDR IMPATT DEVICE J波段矽DDR IMPATT器件LARGE-SIGNAL ANALYSIS OF IMPATT DEVI CES IMPATT器件的大信號分析 返回 IMPATT