常見例句Narrow-gap materials such as InSb have the requisite high mobility. 銻化銦之類的窄能隙材料有我們要的高遷移率。Preparation and optical absorption spectra of nanocrystal InSb[J]. 引用該論文 何焰藍(lán);孫全.Lesley Cohen and the late Tony Stradling of Imperial College London made significant progress preparing high-mobility, ultrathin films of InSb. 英國倫敦大學(xué)帝國學(xué)院的柯恩和已過世的史崔德林,在制作超薄的高遷移率銻化銦薄膜上,曾有莫大的進展。Epitaxial layers of InSb and InAs_xSb_(1-x)on(111)InSb and (100)GaAs substrate have been grown by MBE technique. 在(111)InSb 和(100)GaAs 襯底上,用分子束外延技術(shù)生長了 InSb 和 InAs_xSb_(1-x)外延層。A low concentrations of Br2-MeOH were used for the chemical polishing of InSb wafers. 化學(xué)拋光可以有傚地去除表麪劃痕,改善晶片的表麪形貌,降低粗糙度。Firstiy, the paper introduces the basic electromagnetism theory about InSb, and then analyze the principle of InSb magnetosensitive rev sensor. 本文首先介紹了與銻化銦有關(guān)的基本電磁原理,在此基礎(chǔ)上對銻化銦磁阻轉(zhuǎn)速傳感器原理進行了分析。 返回 InSb