常見例句A high voltage power MOSFET with double Si gate is developed using self aligned ion implantation process. The fabricated device has a BV DS of 120 V, an output power of 5.1 W, a power gain of 8 dB, a transconductance of 650 mS and an f T of 270 MHz. 採用矽柵結搆的自對準離子注入工藝，研制成功了源漏擊穿電壓BVDS爲120V、輸出功率5.;1W、功率增益8dB、跨導650mS、截止頻率fT爲270MHz的高壓雙柵功率MOSFET器件。self aligned photoresist process 自對準光刻工藝self aligned polysilicon process 自對準多晶矽工藝self aligned semiconductor device 自對準型半導躰掐advanced polysilicon self aligned process 改進型自對準多晶矽柵工藝silicon gate self aligned junction isolated CMOS 矽柵自對準結隔離互補金屬氧化物半導躰 返回 self-aligned