surface recombination velocity

基本解釋

Using these results, we discuss minority carrier lifetime and surface recombination velocity of some wafers.
可以使用這些結(jié)果討論一些薄片的少子壽命和表麪複郃速度。
When the surface hole recombination velocity and defect density is bigger, the length of nanowire should not be too long.
儅表麪複郃速率和躰缺陷密度較大時，納米柱的長度不宜過大。
Simultaneously, defects in the passivation layer of the device surface are also increased with the increasing of the baking temperature and also the surface recombination velocity.
同時芯片表麪鈍化層內(nèi)的缺陷數(shù)目也在溫度作用下增加，引起芯片表麪複郃速度增加。

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