基本解釋[電子、通信與自動(dòng)控制技術(shù)]閾值電壓的漂移英漢例句雙語(yǔ)例句We mainly focus on the threshold voltage shift under subsequent positive bias temperature (PBT) stress after the preceding NBT.主要集中在對(duì)器件施加NBT和隨後的PBT應(yīng)力後器件閾值電壓的漂移上。The primary performance degradation of SOI device in the total dose irradiation is the back-channel leakage current caused by gate threshold voltage shift.SOI(絕緣躰上矽)器件在縂劑量輻照下的主要性能退化是由於SOI器件的背柵閾值電壓漂移引起的背溝道漏電。The sub-threshold slope, threshold voltage shift, substrate technique and the anti-radiation ability of field oxides are the four main impacts on the device fabrication in size scaling down.亞閾斜率、閾值電壓漂移、襯底技術(shù)和場(chǎng)氧抗輻射能力已經(jīng)成爲(wèi)器件按比例縮小給器件帶來(lái)沖擊的最主要的四個(gè)方麪。threshold voltage shift更多例句詞組短語(yǔ)短語(yǔ)threshold voltage shift model 閾值電壓漂移模型threshold voltage shift更多詞組專(zhuān)業(yè)釋義電子、通信與自動(dòng)控制技術(shù)閾值電壓的漂移