MQWs

基本解釋

It can be applied to an arbitary refractive index profile of the MQW waveguide.
該公式是偏振態(tài)和量子阱波導折射率分布的函數(shù)。
Because of the lower electron mobility in the miniband, the photocurrent of SL is relatively lower than that of MQWs.
雖然超晶格結構適合操作在低偏壓下，超晶格的光電流相較之下還是比量子井結構的要低。
We find that the photocurrent of this device is not reduced by the additional MQWs but the dark current is.
我們發(fā)現(xiàn)超晶格所產生的光電流并沒有因為量子井結構而降低，但暗電流卻有減少。
InGaAs/GaAs acting as the active region of MQW SEED to gain 980nm work wavelergth has been introduced.
采用 In Ga As/ Ga As作為多量子阱 SEED器件的有源區(qū) ;從而獲得了 980 nm工作波長 .
The net stress is a driving force of misfit dislocation multiplication and is a very important factor for strained MQWs stability.
凈應力是失配位錯增殖的驅動力，是應變多量子阱穩(wěn)定的重要判據。