MQWs

常見例句

• It can be applied to an arbitary refractive index profile of the MQW waveguide.
  該公式是偏振態(tài)和量子阱波導(dǎo)折射率分布的函數(shù)。
• Because of the lower electron mobility in the miniband, the photocurrent of SL is relatively lower than that of MQWs.
  雖然超晶格結(jié)構(gòu)適合操作在低偏壓下，超晶格的光電流相較之下還是比量子井結(jié)構(gòu)的要低。
• We find that the photocurrent of this device is not reduced by the additional MQWs but the dark current is.
  我們發(fā)現(xiàn)超晶格所產(chǎn)生的光電流并沒有因?yàn)榱孔泳Y(jié)構(gòu)而降低，但暗電流卻有減少。
• InGaAs/GaAs acting as the active region of MQW SEED to gain 980nm work wavelergth has been introduced.
  采用 In Ga As/ Ga As作為多量子阱 SEED器件的有源區(qū) ;從而獲得了 980 nm工作波長 .
• The net stress is a driving force of misfit dislocation multiplication and is a very important factor for strained MQWs stability.
  凈應(yīng)力是失配位錯(cuò)增殖的驅(qū)動(dòng)力，是應(yīng)變多量子阱穩(wěn)定的重要判據(jù)。
• By simulation, we found that there is a hetero-junction between Silicon buffer layer and Si/SiGe MQW structure.
  從實(shí)驗(yàn)的數(shù)據(jù)得知，在室溫下，樣品的矽發(fā)光強(qiáng)度隨著注入電流的增加而有顯著的增強(qiáng)；
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