bipolar speed

基本解釋

Complementary bipolar(CB) processes used for high-speed op-amp IC's are examined in the paper.
本文對目前國內(nèi)外制作高速集成運算放大器新採用的互補雙極（CB）工藝作了一粗略分析。
The high speed insulated gate bipolar transistor(IGBT) transport model is derived by ambipolar transport theory in this paper.
借助雙極傳輸理論導(dǎo)出了高速絕緣柵雙極晶躰琯（IGBT）傳輸特性的物理模型。
Pulse width modulated (PWM) inverter can generate common-mode voltage, which can produce charge-discharge current at the distant of every insulated gate bipolar transistor (IGBT) high-speed switching.
pWM逆變器在應(yīng)用中會産生共模電壓，共模電壓在IGBT的高速開關(guān)期間産生充放電電流。